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FDS2070N7
May 2003
FDS2070N7
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
* 4.1 A, 150 V. RDS(ON) = 78 m @ VGS = 10 V RDS(ON) = 88 m @ VGS = 6.0 V * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching, low gate charge (38nC typical) * FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
* Synchronous rectifier * DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
150 20
(Note 1a)
Units
V V A W C
4.1 30 3.0 1.8 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
C/W
Package Marking and Ordering Information
Device Marking FDS2070N7 Device FDS2070N7 Reel Size 13'' Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor International
FDS2070N7 Rev C2(W)
FDS2070N7
Electrical Characteristics
Symbol
WDSS IAR
TA = 25C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
Single Pulse, VDD = 75 V, ID= 4.1 A
Min
Typ
Max Units
370 4.1 mJ A V
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) VGS = 0 V, ID = 250 A 150 154 1 100 -100 2 2.6 -7 57 60 111 24 1884 102 35 VGS = 15 mV, f = 1.0 MHz
(Note 2)
ID = 250 A, Referenced to 25C VDS = 120 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, ID = 4.1 A VGS = 6.0V, ID = 3.8 A VGS = 10 V, ID = 4.1 A,TJ = 125C VDS = 10 V, ID = 4.1 A VDS = 75 V, V GS = 0 V, f = 1.0 MHz
mV/C A nA nA V mV/C 78 88 160 m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
4
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
S pF pF pF 20 12 64 36 53 ns ns ns ns nC nC nC 2.5 1.2 A V nS nC
Dynamic Characteristics
1.6 10 6 40 20
Switching Characteristics
VDD = 75 V, ID = 1 A, VGS = 10 V, RGEN = 6
VDS = 75 V, ID = 4.1 A, VGS = 10 V
38 8 11
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage Diode Reverse Recovery Time IF = 4.1A Diode Reverse Recovery Charge diF/dt = 100 A/s
(Note 2)
0.75 75
(Note 2)
404
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 40C/W when mounted on a 1in2 pad of 2 oz copper b) 85C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS2070N7 Rev C2(W)
FDS2070N7
Dimensional Outline and Pad Layout
FDS2070N7 Rev C2(W)
FDS2070N7
Typical Characteristics
40
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
ID, DRAIN CURRENT (A)
6.0V
30
1.4
VGS = 4.0V 4.5V
4.5V
20
1.2
4.0V
10
6.0V 10V
1
0 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.16
2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 1.8 1.4 1 0.6 0.2 -50
ID = 4.1 A VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
ID = 2.1A
0.14
TA = 125oC
0.12 0.1 0.08 0.06
TA = 25oC
0.04
-25
0
25
50
75
100
o
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
50 IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 0.001 0.0001 -55oC
VDS = 20V
ID, DRAIN CURRENT (A) 40
TA = -55oC
25oC 125oC
30
20
10
0 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS2070N7 Rev C2(W)
FDS2070N7
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 4.1A 8 CAPACITANCE (pF) 75V 6 VDS = 25V 50V
2500 CISS
f = 1MHz VGS = 0 V
2000
1500
4
1000
2
500
COSS CRSS 0 30 60 90 120 150
0 0 10 20 Qg, GATE CHARGE (nC) 30 40
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) R DS(ON) LIMIT 10 ID, DRAIN CURRENT (A) 100s 1ms 10ms 1 DC 0.1 V GS = 10V SINGLE PULSE R JA = 85 oC/W T A = 25 o C 0.001 0.1 1 10 100 1000 V DS , DRAIN-SOURCE VOLTAGE (V) 100ms 1s 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE R JA = 85C/W T A = 25C
30
20
0.01
10
0 0.01
0.1
1
10
100
1000
t 1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R JA (t) = r(t) * R JA R JA = 85 C/W
0.2
0.1
0.1 0.05 0.02 0.01 SINGLE PULSE
P(pk) t1 t2 T J - T A = P * R JA (t) Duty Cycle, D = t1 / t2
0.01 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS2070N7 Rev C2(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2

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